Erase method for flash memory

ABSTRACT

A method of erasing electrically a programmable memory cell which cell includes a transistor formed in a region of semiconductor material. The transistor has a source region, a drain region, a floating gate, and a control gate. The method comprises lowering the control gate to a potential of about −9 volts, disconnecting the source and drain regions from any potential source, and placing the region of semiconductor material at a potential of about 9 volts.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a continuation of and claims benefit of U.S.patent application Ser. No. 09/496,293, filed on Feb. 1, 2000, now U.S.Pat. No. 6,347,054 which is a continuation of U.S. patent applicationSer. No. 08/863,918, filed on May 27, 1997, now U.S. Pat. No. 6,330,190which claims priority from U.S. Provisional Patent Application No.60/018,694, filed May 30, 1996 all of which are incorporated byreference in their entirety for all purposes.

BACKGROUND OF THE INVENTION

This invention relates to integrated circuit nonvolatile memories, andin particular to flash memories. Flash memories areelectrically-erasable nonvolatile memories in which groups of cells canbe erased in a single operation.

Numerous types of integrated circuit memory are now well known, as areprocesses for manufacturing them. One particular type of integratedcircuit memory is nonvolatile memory. Nonvolatile memory is referred toas such because it does not lose the information stored in the memorywhen power is removed from the memory. Nonvolatile memory has manyapplications in products where the supply of electricity isinterruptable. For example, one well known product employing flashmemory is PCMCIA or PC cards. PC cards are small credit card-sizedpackages which contain nonvolatile memory within which a computerprogram or other information is stored. Such devices allow the user toconnect and disconnect the memory card from a computer or otherelectronic apparatus, without losing the program stored within thememory card.

Nonvolatile memory devices include read only memories (ROM),programmable read only memories (PROM), electrically-erasable read onlymemories (EEPROM), as well as other types. Within the field ofelectrically-erasable programmable memories, a certain class of devicesis known as flash memory, or flash EEPROMs. Such memories areselectively programmable and erasable, typically with groups of cellsbeing erasable in a single operation.

In conventional flash memories, each memory cell is formed from atransistor having a source, drain, control gate and floating gate. Thefloating gate is formed between the control gate and the substrate. Thepresence, or absence, of charge trapped on the floating gate can be usedto indicate the contents of the memory cell. Charge trapped on thefloating gate changes the threshold voltage of the transistor, enablingdetection of its binary condition. FIG. 1A and FIG. 1B mustrate typicalprior art flash memory cells.

In most flash memories, charge is placed on, or removed from, thefloating gate by operating the memory at conditions outside its normaloperating conditions for reading its contents. For example, by adjustingthe relative potentials between the gate and the source, drain orchannel regions, charge, in the form of electrons, can be caused to beinjected onto the floating gate, or removed from the floating gate.

An unfortunate disadvantage of existing flash memory cells is that ahigh potential must be applied to the control gate to program thefloating gate. For example, by placing a high positive voltage such as8.5 volts on the control gate and grounding the source region, electronswill be pulled from the source onto the floating gate where they will betrapped. The negative charge on the floating gate then can be used toindicate the presence of a “one” or a “zero” in the memory cell. Anunfortunate consequence of the requirement of using such a highpotential for programming (or erase) is that the peripheral circuitrymust be designed to also handle that high potential. In other words, allof the transistors and the accessing circuitry through which the 8.5volts is applied, must itself be capable of handling the 8.5 voltpotential. The high potential also generates leakage currents, andcauses hot hole degradation. One such typical prior art NOR flash memorycell is described in U.S. Pat. No. 5,077,691 entitled “Flash EEPROMArray with Negative Gate Voltage Erase Operation.”

As a result, it would be desirable to provide a flash memory whichoperates at a lower potential, minimizing these undesirable effects, andwhich provides improved performance.

SUMMARY OF THE INVENTION

This invention provides a flash memory cell having unique advantagesover previous flash memory cells, together with a process formanufacturing such a cell and associated peripheral circuitry. The flashmemory cell of this invention may be programmed and erased usingsubstantially lower voltages than are employed in prior art flash memorycells. This provides advantages by enabling peripheral circuitry whichsupports the memory array and is on the same integrated circuit chip tobe designed to handle lower voltages. This enables the use of smallertransistors, resulting in higher yields, greater reliability, and lowercosts.

In a preferred embodiment, the flash memory cell structure of ourinvention includes a triple well integrated circuit structure. Inparticular, the memory cell includes a semiconductor substrate formedfrom first conductivity type material and having an upper surface. Afirst well region of second conductivity type extends into the substrateadjacent the surface, the second conductivity type being opposite to thefirst conductivity type. The first well includes within it a secondwell, also formed adjacent the surface of the substrate, and of firstconductivity type material. A floating gate transistor is formed in thesecond well region, and includes a source region, a drain region, afloating gate disposed above the surface and electrically isolated fromthe substrate. The floating gate extends between the source and drainregions. A control gate is disposed above the floating gate. A firstcontact region is provided to the first well for controlling itspotential, and a second contact region is provided to the second wellfor controlling its potential. As will be described, the use of multiplewells enables the memory cell to be programmed and erased with lowervoltages than previously possible. It also minimizes the need for theperipheral circuitry to handle high potentials. The peripheral circuitrycan be formed at any desired location depending on the propertiesdesired, including in the first well, in the second well, or in thesubstrate outside both wells.

The invention also includes a process for fabricating an integratedcircuit memory cell. In the preferred embodiment of the process, asemiconductor substrate of first conductivity type is employed. A firstwell region of second conductivity opposite to the conductivity of thefirst conductivity type is formed in the substrate and has a periphery.Within the periphery of the first well region, but also. adjacent thesurface of the substrate, a second well region is formed. Preferably,the second well region is of first conductivity type. Also formed withinthe periphery of the first well region is a first contact region whichis spaced apart from the second well region. The first contact region isof second conductivity type and is more conductive than the first wellregion. A first insulating layer is formed across the surface of thesubstrate, and a conductive layer is formed on the insulating layer toprovide a floating gate which is disposed above the surface of thesubstrate and electrically isolated therefrom. On the surface of thefirst conductive layer, a second insulating layer is formed. Over thesecond insulating layer a second conductive layer is formed whichprovides a control gate. Using the control gate and the floating gate asa mask, dopants are introduced into the second well region to form asource region, and a drain region. During this process a contact regionis also formed to contact the second well. The contact region is spacedapart from the source region and the drain region, and is moreconductive than the second well.

The invention also includes a unique technique for programming memorycells. In a preferred embodiment, the memory cells are programmed byraising the control gate to a first potential no greater than 9.0 volts.The drain is raised to a potential no more than 5.0 volts. The source iscoupled to ground potential, and the region of semiconductor materialwithin which the source and drain are formed is placed at a potentialbelow ground potential. In response to this condition, electrons arecaused to move from the substrate channel through the insulating layerand onto the floating gate. Their presence (or absence) on the floatinggate can be used to indicate the state of the memory cell.

The invention also includes a technique for erasing memory cells. Memorycells formed according to the invention may be erased by lowering thepotential of the control gate to a potential no more negative than −9.0volts. The source and drain regions are disconnected from any potentialsource, and the semiconductor material within which the source and drainregions are formed is then placed at a potential no more positive than8.0 volts. In response to this condition, any electrons trapped on thefloating gate will be caused to tunnel through the intervening oxideover the channel and return to the substrate. As a result, the memorycell will be erased.

A particular advantage to the triple well flash memory of this inventionis that a uniform erase may be performed instead of a nonuniform (sourceedge) erase. The uniform erase provides better endurance and dataretention. The uniform erase is advantageous because the electronstunnel through an insulating layer, eliminating the hot hole injectionproblems due to band-to-band tunneling and source edge erase which wereproblems of prior art devices. Hot hole degradation involves holes beingtrapped in the insulating oxide between the gate and source region. Thisresults in leakage current and changes the erase characteristics.

An additional advantage of the triple well structure is that it allowsindependent control of the memory cell region substrate potential incontrast to the peripheral circuit substrate potential. In other words,the potential of the substrate in the region of the memory cells can becontrolled independently of the potential of the substrate in theperipheral circuit regions. In contrast to prior art devices andprocesses, this enables the application of positive or negative voltageto the cell substrate, while simultaneously maintaining ground potentialin the region of the peripheral devices. Such an approach allows for theuniform channel erase and the use of lower potentials.

In prior art flash memories, currents on the order of 20-30 milliampswere required to erase a block, and the use of channel erase was notfeasible because the difference in potential between the substrate andthe control gates could not be made large enough. Utilizing thetechniques described here, erase currents for a block of cells can bereduced to on the order of 100 microamps. The low power and low currentrequirements of this invention make its applicability to battery-powereddevices particularly advantageous.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B illustrate a prior art flash memory cell;

FIGS. 2A and 2B illustrate a preferred embodiment of the flash memorycell of this invention;

FIGS. 3-31 illustrate a preferred embodiment of a method formanufacturing the flash memory cell of this invention, with the specificfigures as follows:

FIG. 3 illustrates the structure after implantation of the N-well;

FIG. 4 illustrates the structure after implantation of the P-well;

FIG. 5 illustrates the structure after annealing the P- and N-wells andforming a mask;

FIG. 6 illustrates the structure after formation of field oxide regions;

FIG. 7 illustrates the structure after implantation of the N-channelfield;

FIG. 8 illustrates the structure after the N-channel thresholdadjustment implant;

FIG. 9 illustrates the structure after the P-channel threshold implant;

FIG. 10 illustrates the structure after formation of gate oxide;

FIG. 11 illustrates the structure after the cell implant;

FIG. 12 illustrates the structure after removal of the gate oxide layerin a selected region;

FIG. 13 illustrates the structure after formation of the first layer ofpolycrystalline silicon;

FIG. 14 illustrates the structure after masking and etching the firstlayer of polycrystalline silicon;

FIG. 15 illustrates the structure after formation of the ONO insulatinglayers;

FIG. 16 illustrates the structure after formation of new gate oxide in achosen location;

FIG. 17 illustrates the structure after formation of the second layer ofpolycrystalline silicon;

FIG. 18 illustrates the structure after formation of a mask;

FIG. 19 illustrates the structure after etching the second layer ofpolycrystalline silicon and forming a new mask;

FIG. 20 illustrates the structure after further etching is completed;

FIG. 21 illustrates the structure after implantation of memory cellsource regions;

FIG. 22 illustrates the structure after implantation of memory celldrain regions;

FIG. 23 illustrates the structure after P type source drain implantationof some peripheral transistors;

FIG. 24 illustrates the structure after N type source drain implantationof other peripheral transistors;

FIG. 25 illustrates the structure after further P type source drainimplantation of still other peripheral transistors;

FIG. 26 illustrates the structure after annealing and deposition ofBPSG;

FIG. 27 illustrates the structure after formation of a contact mask;

FIG. 28 illustrates the structure after deposition of the first layer ofmetal;

FIG. 29 illustrates the structure after formation of a second contactmask;

FIG. 30 illustrates the structure after deposition of second metal; and

FIG. 31 illustrates the structure after deposition of a passivationlayer.

DESCRIPTION OF THE SPECIFIC EMBODIMENTS

FIG. 1 illustrates a prior art flash memory cell in program (FIG. 1A)and erase (FIG. 1B) modes. The flash memory cell depicted includes asubstrate 10, typically monocrystalline silicon, a double-diffusedsource region 18, and a drain region 16. Spaced above the substrate by athin insulating layer 13 is a floating gate 15. Above the floating gate,and electrically isolated from it, is a control gate 12. Typically, theflash memory cells shown will provide a single bit in a much largermemory, for example, an integrated circuit chip with millions of bits offlash memory. The individual transistors on the integrated circuit areorganized in a matrix, with orthogonally arranged bit lines and wordlines. Typically, the drain region 16 will be connected to a bit line,while the control gate 12 is connected to a word line. In this waymatrix addressing is provided.

The flash memory cells shown in FIGS. 1A and 1B can be operated inseveral different modes—program, erase, and read. The operatingconditions for each mode are discussed below.

In the program mode of prior art devices, a high potential, preferably+8.5 volts, is placed on the control gate 12 for the selected word line.Nonselected word lines remain at ground. The selected bit line is placedabout +4.5 volts, and this bit line is coupled to drain 16. The sourceregion 18 is grounded. The result of these conditions is that hotelectrons produced by channel current are attracted by the +8.5 voltpotential on the control gate and tunnel through the thin oxide betweenthe floating gate 15 and the channel region 18. Once on the floatinggate, they are trapped, and charge the floating gate negatively. Thenegative charge changes the threshold voltage of the transistor. In thismanner, the memory cell is programmed.

To read the prior art memory cell, a potential, typically Vcc of about+5 volts, is applied to the selected word line, while about 1 volt isapplied to the selected bit line. The presence, or absence, of electronson the floating gate makes the transistor harder, or easier, to turn on.By sensing whether the bit line changes potential, the state of thefloating gate can be detected.

In erase mode as shown in FIG. 18, a large negative voltage, usually−8.5 volts, is applied to the control gate of a group of selecteddevices to be erased. The bit line is allowed to float, while the sourceis held at an intermediate positive voltage, for example 3 to 5 volts.The combined negative potential on the control gate with the positivepotential on the source, moves the electrons off the floating gate andback into the substrate through the source region, thereby dischargingthe floating gate and erasing the cells.

FIGS. 2A and 2B illustrate cross-sectional views of a flash memory cellaccording to a preferred embodiment of this invention. The same cell isillustrated in FIGS. 2A and 2B, with FIG. 2A showing the conditions forprogramming and FIG. 2B the conditions for erase.

In FIG. 2A a flash memory cell is fabricated in a preferably siliconsubstrate 20. The substrate is P conductivity type silicon, and an Nconductivity type silicon well 22 is formed in the P substrate 20. (Theprocess for manufacturing the structure shown in FIGS. 2A and 2B will bedescribed below.) N-well 22 contains the depicted flash memory cell, andtypically will be large enough to contain hundreds or thousands of suchcells. Usually, at least as many cells will be formed in the N-well 22as are desired to be erased in a block erase operation. Within N-well22, a P conductivity type well 24 is formed. The source 27 and drain 26are formed in the P-well, together with an additional doped region 28 toprovide electrical contact to the P-well 24. The floating gate 29, andcontrol gate 21 are also shown. A contact 25 to the N-well is providedto enable biasing the N-well 22.

For programming the cell, in the preferred embodiment the control gate21 is held at a potential no greater than +9.0 volts, and preferably+6.5 volts, while the drain 26 is connected to a positive supply of +5.0volts or less, preferably +4 volts. The source 27 is grounded, as is theN-well contact 25. P contact 28 to the P-well is held at a negativepotential, typically −4 volts.

The conditions depicted create a field-enhanced channel hot electroneffect by which the negative voltage on the P-well and the positivevoltage on the control gate cause electrons to tunnel onto the floatinggate 29 through the gate oxide over the channel. This places a negativecharge on the floating gate. Note that in comparison to the prior artcircuit shown in FIG. 1, significantly lower programming potentials arerequired. This reduces the need for higher capability peripheralcircuits, lowers operating potentials and reduces power consumption.

After programming, the cell shown in FIG. 2A may be read by applying apositive potential, typically Vcc or +5 volts, to control gate 21, and a1-volt signal to the bit line 26. The nonselected word lines are held atground, while the nonselected bit lines are allowed to float. Thepresence, or absence, of electrons on floating gate 29 makes thetransistor harder, or easier, to turn on, and this condition is detectedby the bit line connected to the drain 26. If the transistor turns on,the bit line is discharged to ground. The state of the bit line is theninterpreted as a “one” or a “zero.”

The device illustrated may be erased using the conditions shown in FIG.2B. As shown there, to erase the cell the control gate is placed at alower potential no more negative than −9.0 volts, preferably −6.5 volts,while the P-well 24 and the N-well 22 are taken to a positive potentialno more positive than +8.0 volts, but preferably +6.5 volts. Thepositive potential on the wells, coupled with the negative potential onthe control gate, causes electrons on the floating gate to be attractedback into the substrate through the gate oxide, thereby erasing thedevice. Again, note that significantly lower potentials are beingapplied to the device shown in FIG. 2B than to the device shown in FIG.1B.

Table 1 below summarizes the read, erase, and programming conditions forthe triple well cell illustrated in FIGS. 2A and 2B. Program verify,erase-2, and program-2 modes are also shown. These are described below,however, essentially erase-2 and program-2 provide source side erase andprogram functions, while the erase and program functions discussed aboveprovide channel erase and program functions.

TABLE 1 Pro- gram Veri- Pro- Read Erase Program fy Erase-2 gram-2Word-line Vcc −3.0˜−9.0 +5.0˜+9.5 +5.0 −5.0˜−9.0 +5.0 (selected) (+5)(−6.5) (+6.5) (−6.5) Word-line 0 0 0 0 0 0 (un- selected) Bit-line +1.0F +3.0˜+5.0 +1.0 F +1.0 (selected) (+4.0) Bit-line F F F F F F (un-selected) Source 0 F 0 0 +3.0˜+6.5 −4.0 N-well 0 +3.0˜+9.0 0 0 +2.0˜+6.00 (+6.5) P-well 0 +3.0˜+9.0 −2.0˜−4.0 0 +2.0˜+6.0 −4.0 (+6.5) (−4.0)Note: In the table above, preferred operating conditions are shown inparentheses.

In an alternative embodiment of the invention, a constant electricalfield between floating gate 29 and P-well 30 is maintained during eraseby applying a ramped voltage or stepped voltage on either the gate orthe P-well, or both. For example, the P-well voltage can be ramped orstepped from +3 to +7 volts, and/or the voltage on the gate can beramped from −5 to −9 volts. Such a technique has the advantage ofenabling slow-to-erase bits to be erased at the same time as fastererasing bits. This helps tighten up the erase time distribution, and atthe same time reduces the stress of erasing which causes induced leakagecurrents. It has the further advantage of removing a required eraseverification operation.

An additional erase operation, termed “erase-2” herein, enables sourceedge erase with a P-well voltage to suppress band-to-band tunneling.current. It also reduces window closing. Such an erase operation reducesthe power consumption during erase, and improves the endurance of thedevice by reducing hot holes generated at the edge of the source-gateregion. A similar programming operation is referred to as “program-2.”

FIGS. 3-31 illustrate a preferred embodiment of the process formanufacturing a flash memory cell according to this invention. To fullyillustrate the invention, the process shown in the figures, anddiscussed below, includes the formation of five different types oftransistors. Across the upper portion of FIG. 3, and a later figure aswell, is shown the different types of transistors which will be formedby the process of the invention. In particular, the process of theinvention enables the fabrication of flash memory cells, together withperipheral CMOS circuitry, of both P-channel and N-channel type. Ofcourse, in the implementation of a particular flash memory product, theneed for both P- and N-channel type transistors may not be present;however, both types are illustrated in the figures for completeness.

As shown across the upper portion of FIG. 3, in the left-hand portion ofeach of the figures from FIG. 3 to FIG. 31 will be described the stepsnecessary to form a thin oxide N-channel transistor. N-channeltransistors such as this one will operate at voltages on the order of +5volts. Immediately adjacent the thin oxide N-channel fabrication processis described the process for fabrication of a thick oxide N-channeldevice. Thick oxide N-channel devices will be used in the peripheralcircuitry for higher voltage applications. For example, such devicestypically will be used to handle the programming and erase modes wherepotentials on the order of up to +9 volts will be applied.

In the center of each of the figures, the process for forming a flashmemory cell is described. As discussed above, this flash memory cell isformed in a triple well structure in which an N-well is formed in a Psubstrate, and the memory cell is formed in a P-well wholly within theN-well. Of course if desired, but at cross sections not shown in thefigures, N-channel devices can also be formed in the P-well. TheseN-channel devices, unlike the memory cells, will not include a floatinggate.

Immediately adjacent the memory cell in the illustrations is describedthe process for forming a thin oxide P-channel transistor. Such deviceswill be used in the peripheral circuitry for handling lower potentials,for example, up to about +5 volts. Adjacent them in the figures isdescribed the process for forming thick oxide P-channel transistors.These transistors operate at higher potentials than the thinner oxideP-channel devices formed adjacent them. As with the thick oxideN-channel devices, the thick oxide P-channel devices will be used forcircuitry for generating and distributing the higher potentials neededfor programming and erase of the flash memory cells.

In FIG. 3 a P conductivity silicon substrate, preferably of 8-10 ohmcentimeter resistivity, and of crystal orientation <100> is provided.Using conventional processes, the substrate is oxidized to provide athin layer of silicon dioxide 31. On the upper surface of silicondioxide 31 a mask 32 is formed, preferably of photoresist. Using wellknown techniques, the mask is exposed and developed to remove it fromregions where the N-well 22 (see FIG. 2A) is desired. Next, again usingwell known technology, N conductivity type impurity, for examplephosphorus, is implanted into the surface of the silicon to dope theN-well. Preferably the implantation is carried out with an energy of 2.2mev and an impurity concentration of 6 E 12 cm⁻². At the conclusion ofthe implantation, the appearance of the structure is as shown in FIG. 3.FIG. 3 has been labeled with designations for the general locationswhere peripheral circuitry transistors and memory cells (flash) will beformed. In most integrated circuits the majority of the surface willconsist of memory cells.

Next, as shown in FIG. 4, the photoresist 32 is removed, and anannealing process is performed to drive in the N-well dopant and createN-well 40. A new layer of photoresist 41 is applied to the upper surfaceof the integrated circuit, then masked and developed to expose regionswhere a P-well is desired. A P-well implant is then performed, forexample, using boron or other P conductivity type impurity at aconcentration of 1.5 E 13 cm⁻² and an energy of 100 kev.

The N-well will encompass the memory cell region of the chip. It canencompass as few or as many of the memory cells as desired, with othergroups of memory cells being formed in other N-wells. The use of theN-well allows erasing of small blocks, for example, a single word line,and makes the choice of block size for the erase block to be arbitrary.This is a result of the lower potentials required by the triple wellprocess in comparison to prior art source side erase. In prior artdevices an erase block size was defined by current limitations. Largedecoding transistors were needed to handle the high power used, andthese consumed excessive chip area. In this invention the use of theN-well eliminates the need for large decoding transistors and enablesarbitrary groups of cells to be erased simultaneously. As mentionedabove, in addition, the erase can be made more uniform by virtue of theuse of channel erase. FIG. 4 illustrates the appearance of the structureafter the implantation of the P type impurities.

Photoresist 41 is removed, and as shown in FIG. 5, the P-well dopant isdriven in using a thermal annealing process. All of the silicon dioxideon the upper surface is stripped, for example using an acid dip orplasma etching process. A new layer of silicon dioxide 51 is then formedacross the upper surface of the integrated circuit, for example using athermal process, to create 200 Angstroms of silicon dioxide. On theupper surface of silicon dioxide 51 a layer of polycrystalline silicon53 is formed, preferably to a thickness of about 400 Angstroms usingwell known techniques, for example, chemical vapor deposition. Thefunction of the polysilicon layer 53 is to serve as a stress releaselayer. On top of the polycrystalline silicon layer 53 a layer of siliconnitride 54 is deposited, again using chemical vapor deposition,typically to a thickness of about 2000 Angstroms. On top of the siliconnitride 54 another layer of photoresist 55 is deposited. Layer 55 isthen exposed and developed, again using well known techniques. Thephotoresist is removed wherever field oxide regions are desired. Plasmaor reactive ion etching is then performed to remove the regions ofsilicon nitride 54 exposed between the islands of photoresist 55. Suchetching is well known in the art. The appearance of the structure atthis stage in the process is as depicted in FIG. 5.

The next steps of the process are discussed in conjunction with FIG. 6.As shown there, the photoresist is removed from the upper surface of thestructure, and an oxidation, typically at high temperature, performed tocreate field oxide regions 61, referred to as FOX in the figures. Fieldoxide regions 61 function to isolate electrically various portions ofthe integrated circuit from each other. In a preferred embodiment, thefield oxide is 0.5 microns thick, and is formed by heating the substrateto a temperature of 1150° C. for 300 minutes. Field oxide regions suchas regions 61 are well known in the art.

After formation of the field oxide regions, the nitride layer isstripped from the surface of the structure, for example using a dip in ahot H₂PO₄ solution (phosphoric acid). Then the underlyingpolycrystalline silicon is removed, as well as the silicon dioxide layer51 beneath the polycrystalline silicon. A new layer of silicon dioxide63 is then formed across the upper surface of the structure, preferablyby heating the silicon. Because it will be removed later, oxide 63 isreferred to as sacrificial. The appearance of the structure afterformation of sacrificial oxide 63 is shown in FIG. 6.

A layer of photoresist 71 is next formed across the upper surface of thestructure, then masked and developed to expose the regions where a fieldimplant is desired. The field implant will be introduced into the P-typeregions. This N-channel field implant is a deep implant in regions whereactive N-channel devices will later be formed. This is shown in FIG. 7.Preferably, the N-channel implant will be introduced using an energy of165 kev and a concentration of 5 E 12 cm⁻² of boron impurity.

FIG. 8 illustrates the next steps of the process. As shown there a newphotoresist masking layer 81 is formed across desired regions of thesurface of the integrated circuit, again using well knownphotolithographic technology. The photoresist is removed from at leastareas where memory cells will later be formed, and a threshold voltageadjusting implant is then performed in those regions.

As shown by FIG. 9, a new mask 83 is formed and a P-channel thresholdvoltage implant performed to adjust those peripheral transistors. Thenthe photoresist is removed, and an etching operation is next performedto remove the sacrificial oxide from the surface of the exposed portionsof the integrated circuit.

As shown by FIG. 10, a new layer of silicon dioxide 92 is formed overthe structure. This new layer provides the thick gate oxide for thethick oxide P- and N-channel transistors in the peripheral circuitry. Asshown in FIG. 11, a new photoresist mask 94 is applied to expose thoseregions 96 where the memory cell threshold voltage implant is to occur.The cell implant, P-type impurity, preferably boron, is introduced usinga dose of 3 E 13 cm⁻² and an energy of 40 kev.

After cell implant, the same mask 94 is used to remove thick gate oxide92. The exposed silicon dioxide is then etched (see FIG. 12), and newgate oxide 98 formed, again using well known techniques. This new layer98 will provide the tunnel oxide through which the electrons tunnelduring programming and erase of the memory cells. Preferably, thetunneling oxide 98 is 85 Angstroms thick, and is formed by heating thestructure to a temperature of 850° C. for 45 minutes in steam andannealing at 900° C. for 30 minutes in N₂.

After formation of the oxide 98, a layer of polycrystalline silicon 95is deposited across the upper surface of the structure, for exampleusing chemical vapor deposition, to form a layer approximately 1000Angstroms thick. This layer is then doped with phosphorus impurity torender it conductive. The polycrystalline silicon layer 95 provides thefloating gate for the memory cells, and the control gate for transistorsin the peripheral circuitry.

As next shown in FIG. 14, another mask 99, preferably photoresist, isformed across the structure to mask desired regions of thepolycrystalline silicon 95 which are to remain on the structure. Thethereby-exposed polycrystalline silicon 95 is etched from the surface ofthe structure, for example, using well known plasma etching oranisotropic etching processes. After the etching is complete, theappearance of the structure is as depicted in FIG. 14.

FIG. 15 illustrates the next steps in the manufacturing process. Thephotoresist layer 99 is stripped, and then a sequential deposition ofsilicon dioxide, silicon nitride, and silicon dioxide is performed tocreate an “ONO sandwich” composite insulating layer 102 which is on topof the polycrystalline silicon 95 in those regions where polycrystallinesilicon layer 95 was formed and is on top of the thick gate oxide 92 inthe other regions of the circuit. Preferably, the ONO layer is depositedusing chemical vapor deposition; however, other well known techniquesmay be employed. Preferably, the ONO layer comprises 50 Angstroms oflower silicon dioxide, 60 Angstroms of intermediate silicon nitride, and50 Angstroms of upper silicon dioxide. After formation of the ONO layer,a new masking layer 107 is deposited and defined to protect thoseregions where the polycrystalline silicon layer 95 remains.

After formation of the mask 107 and as shown in FIG. 16, the exposedregions of the ONO sandwich structure are removed, using conventionaletching procedures. This step removes the ONO composite layer, and alsoremoves the thick gate oxide layer 92 in the exposed regions. Thephotoresist is then stripped. A new gate oxide layer 128 is formed. Thisnew gate oxide is thinner (approximately 110 Angstroms) and is formedwhere lower power P- and N-channel transistors are to be formed.

Then, as shown in FIG. 17 a second layer of polycrystalline silicon 132is deposited across the surface of the structure. Preferably,polycrystalline silicon 132 will be 1000 Angstroms thick, and isdeposited using conventional chemical vapor deposition processtechnology. Following the deposition of the polycrystalline silicon 132,it is doped with phosphorus impurity using a POCl₃ process. This “poly2” layer will provide interconnections in the circuit. The second layerof polysilicon can be used to provide interconnections to the firstlayer of polysilicon in peripheral regions of the circuit. It can alsoprovide a capacitor or be used for other connections in the memory cellregion. A mask 135 is then formed to selectively protect the secondpoly. As shown by FIG. 18, the polysilicon 132 is then etched to removeit from undesired locations on the structure. Then a layer of tungstensilicide 133 is deposited across the upper surface of thepolycrystalline silicon 132. On the upper surface of the tungstensilicide, an antireflective coating (not shown) is deposited, enablingmore accurate masking tolerances by minimizing reflections from theupper surface of the tungsten silicide. Finally, a mask 139 is formedacross the upper surface of the structure to further define the regionsof the structure where the second layer of polycrystalline silicon is toremain. In the cross-section shown in the figures, these are the regionswhere gate electrodes are desired. Using mask 139, the second layer ofpolysilicon 133 is etched. Then a new mask 140 (see FIG. 19) is formedto protect portions of the structure, and define control and floatinggates in the poly 1 layer 95 (see FIG. 19).

As shown by FIG. 20, the second layer of polycrystalline silicon 132 isthen etched, again using conventional process technology. After etchingthe second layer of polycrystalline silicon 132, the polycrystallinesilicon layer 132 is used as a mask to permit removal of exposed regionsof the ONO sandwich layer. The ONO sandwich then functions as a mask foretching of the first level of polycrystalline silicon layer 95. In thismanner, the memory cell gates are formed. After etching, the structureis reheated to again form a protective layer of oxide over the therebyexposed regions of silicon. Note that the memory cell transistorincludes a floating gate and a control gate, while other transistorsintended for use in peripheral circuitry do not.

FIG. 21 illustrates the next steps in the process of fabrication. A mask161 is formed across the surface of the structure to protect regionsother than the source regions of the memory cell transistors. A doubleimplant is then performed, with a first implant of N conductivity typeimpurity and a relatively low dose 3 E 14 cm⁻² and energy level 50 kev.A second implant at a higher concentration is performed following thefirst implant. These implants define the double-diffused source regionconcentration for the memory cells.

As shown in FIG. 22, all the photoresist is removed and a new mask 171formed which exposes only the drain regions of the memory cells. Anotherimplant is performed, this time of arsenic impurity at a concentrationof 3.5 E 15 cm⁻² and an energy of 50 kev. FIG. 22 illustrates theresulting implanted drain regions.

FIG. 23 shows a similar implant through masks 175 to form the source anddrain regions for other transistors. The photoresist is removed and thestructure is next heated to a temperature of 900° C. for 25 minutes toanneal the source drain implants. This results in the formation of thesource and drain regions 181 and 182. The annealing operation alsoresults in the formation of a silicon dioxide layer 184 over thepolysilicon. Most of this layer is then removed using a blanket etch. Bystopping the etch before all of the oxide is removed, spacer regions 184remain on the sidewalls of the polycrystalline silicon gates. Thisenables formation of lightly doped drain structures. A new mask 175 isthen formed to expose the peripheral transistors where more highly dopedsource/drains are desired; then an implant of 3.5 E 15 cm⁻² is performedas shown in FIG. 23.

As shown by FIG. 26, following the annealing, a layer of silicon dioxideis deposited across the upper surface of the structure, followed by alayer of BPSG (boron phosphorous silicate glass) 186. The structure isthen heated to generally planarize the layer of BPSG 186.

A mask, not shown, is formed across the upper surface of the BPSG, andthe BPSG is etched as shown in FIG. 27 to define locations for contactsto the surface of the structure, as well as to other regions. Then inFIG. 28, a barrier metal, for example titanium/titanium nitride, isdeposited into the openings in BPSG layer 186, followed by a depositionof the desired first layer metallization. The first layer metal ispreferably aluminum. On the upper surface of the aluminum, a layer oftitanium nitride is deposited to provide an antireflective coating. Thefirst layer metal is then masked and etched, and the photoresiststripped. The remaining metal contacts 188 are shown in FIG. 28. Acrossthe upper surface of the BPSG 186 and the metal contacts 188 isdeposited an intermetal oxide, for example silicon oxide material, usingchemical vapor deposition. IMO layer 211 is shown in FIG. 29. On top ofthe IMO layer, a spin-on glass coating 212 is deposited, and on itsupper surface another intermetal oxide 214 is deposited. Preferably,layer 211 is approximately 1000 Angstroms thick, while layer 214 isapproximately 2000 microns thick. A mask, not shown, is then formedacross the upper surface of the second intermetal oxide. The mask isexposed and developed to create openings for etching of the layers 212and 214. These layers are then etched, preferably using a plasma, toform openings for vias 217 to the first layer of metal. The photoresistis removed, and the appearance of the structure is depicted in FIG. 21.

As shown by FIG. 30, another layer of metal, for example aluminum, isdeposited across the upper surface of the chip to fill the via openings217 and provide for the second metal layer. On its upper surface anantireflective titanium nitride coating is deposited, and then thesecond layer of metal is masked and etched, and the photoresiststripped, to create the structure depicted in FIG. 30.

FIG. 31 illustrates the completed structure following the addition of apassivation layer 232 on the upper surface of the second layer of metal221. The passivation layer is masked and etched, the photoresiststripped, and then the structure annealed in nitrogen to create thefinished integrated circuit within a wafer.

Following this step, using well known semiconductor manufacturingoperations, the resulting product can be tested, placed in packages andinterconnected to the package, and then encapsulated.

The foregoing has been a description of the flash memory cell of ourinvention, as well as the process for fabricating it. Although it willbe appreciated that numerous specific times, temperatures, and otherprocess details have been provided, those of ordinary skill in the artwill appreciate that numerous deviations may be made from the process,as well as the structure, without departing from the scope of theinvention. The scope of the invention will be defined by the appendedclaims.

What is claimed is:
 1. A method of erasing electrically a programmablememory cell which cell includes a transistor formed in a region ofsemiconductor material, the transistor having a source region, a drainregion, a floating gate, and a control gate, the method comprising:lowering the control gate to a potential of about −9 volts;disconnecting the source and drain regions from any potential source;and placing the region of semiconductor material at a potential of about9 volts.
 2. A method of erasing electrically a programmable memory cellwhich cell includes a transistor formed in a semiconductor substrate offirst conductivity type having a surface, a first well region of secondconductivity type disposed in the substrate adjacent the surfacethereof, a second well region of first conductivity type disposed in thefirst well region adjacent the surface, the transistor having a sourceregion, a drain region, a floating gate, and a control gate, the methodcomprising: lowering the control gate to a potential of no more negativethan a first voltage which is negative; and placing the first wellregion of second conductivity type at a potential no more positive thana second voltage which is positive, wherein absolute values of thepotential of the control gate and the potential of the first well regionof second conductivity are substantially the same in magnitude.
 3. Theerase method of claim 2, further comprising: placing the second wellregion of first conductivity type at a potential no more positive than athird voltage which is positive, wherein absolute values of thepotential of the first well region of second conductivity and thepotential of the second well region of first conductivity aresubstantially the same in magnitude.
 4. The erase method of claim 3,wherein the magnitude of the first voltage is about −9 volts and themagnitude of the second voltage is about 9 volts.
 5. The erase method ofclaim 4, wherein the magnitude of the third voltage is about 9 volts. 6.The erase method of claim 3, further comprising: floating the drain andsource regions.
 7. The erase method of claim 4, further comprising:floating the drain region; and placing the source region to a potentialthat is no more positive than the second well region by about 1 volt. 8.The erase method of claim 7, wherein the source region is placed at thepotential that is about 0.5 volt greater than the potential of thesecond well region of first conductivity.
 9. The erase method of claim2, wherein the magnitude of the first voltage is about 6 volts and themagnitude of the second voltage is about 6 volts.
 10. The method ofclaim 2, wherein the difference of the magnitudes of the potential ofthe control gate and the potential of the first well region of secondconductivity in absolute term is no more than 2 volts.
 11. The method ofclaim 2, wherein the difference of the magnitudes of the potential ofthe control gate and the potential of the first well region of secondconductivity in absolute term is no more than 1 volt.
 12. The method ofclaim 2, wherein the difference of the magnitudes of the potential ofthe control gate and the potential of the first well region of secondconductivity in absolute term is no more than 0.5 volt.
 13. A method oferasing electrically a programmable memory cell which cell includes atransistor formed in a semiconductor substrate of first conductivitytype having a surface, a first well region of second conductivity typedisposed in the substrate adjacent the surface thereof, a second wellregion of first conductivity type disposed in the first well regionadjacent the surface, the transistor having a source region, a drainregion, a floating gate, and a control gate, the method comprising:lowering the control gate to a potential of no more negative than afirst voltage which is negative; floating the drain region;disconnecting the source region from any potential source; and placingthe second well region of first conductivity type at a potential no morepositive than a third voltage which is positive, wherein the potentialof the control gate and the potential of the second well region of firstconductivity are substantially the same in magnitude.
 14. The erasemethod of claim 13, further comprising: placing the first well region ofsecond conductivity type at a potential no more positive than a secondvoltage which is positive, wherein the potential of the first wellregion of second conductivity and the potential of the second wellregion of first conductivity have substantially the same magnitude,wherein the magnitude of the second voltage is no more than about 9volts.
 15. The erase method of claim 13, wherein the magnitude of thefirst voltage is about 9 volts and the magnitude of the third voltage isabout 9 volts.
 16. The erase method of claim 15, wherein the magnitudeof the second voltage is about 9 volts.
 17. The erase method of claim13, further comprising: floating the drain region; and placing thesource region to a potential that is no more positive than the secondwell region by about 1 volt.
 18. The erase method of claim 13, whereinthe source region is placed at the potential that is about 0.5 voltgreater than the potential of the second well region of firstconductivity.
 19. The erase method of claim 14, wherein the magnitude ofthe first voltage is about 6 volts and the magnitude of the thirdvoltage is about 6 volts.
 20. The erase method of claim 19, wherein themagnitude of the second voltage is about 6 volts.
 21. The erase methodof claim 15, wherein the magnitude of the second voltage is no more thanabout 6.5 volts.
 22. A method of erasing electrically a programmablememory cell which cell includes a transistor formed in a region ofsemiconductor material, the transistor having a source region, a drainregion, a floating gate, and a control gate, the method comprising:lowering the control gate to a potential of no more than about no morethan −6.5 volts; disconnecting the drain region from any potentialsource; and placing the region of semiconductor material at a potentialof no more than about 6.5 volts.
 23. The method of claim 22, furthercomprising: placing the source region at a potential of no more than 6.5volts.
 24. The method of claim 22, further comprising: disconnecting thesource region from any potential source.
 25. The method of claim 22,wherein the region of semiconductor material is an N well.
 26. Themethod of claim 22, wherein the region of semiconductor material is a Pwell.